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SDP06S60 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # SDP06S60
Description  Silicon Carbide Schottky Diode
Download  9 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SDP06S60 Datasheet(HTML) 1 Page - Infineon Technologies AG

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200
8-06-02
Rev. 2.
4
Page 1
SDP06S60
SDT06S60
thinQ! SiC Schottky Diode
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• Ideal diode for Power Factor
Correction up to 1200W1)
• No forward recovery
Product Summary
VRRM
600
V
Qc
21
nC
IF
6
A
PG-TO220-2-2.
P-TO220
Pin 1
Pin 2
n.c.
C
Type
Package
Ordering Code
SDP06S60
P-TO220
-3
Q67040-S4371
SDT06S60
PG-TO220-2-2.
Q67040-S4446
Pin 3
A
Marking
D06S60
D06S60
C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous forward current, T
C=100°C
IF
6
A
RMS forward current
, f=50Hz
IFRMS
8.4
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms
IFSM
21.5
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
IFRM
28
Non repetitive peak forward current
tp=10µs, TC=25°C
IFMAX
60
i 2t value
, T
C=25°C, tp=10ms
i2dt
2.3
A²s
Repetitive peak reverse voltage
VRRM
600
V
Surge peak reverse voltage
VRSM
600
Power dissipation
, T
C=25°C
Ptot
57.6
W
Operating and storage temperature
Tj , Tstg
-55... +175
°C


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