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SEMIX703GAR126HDS Datasheet(PDF) 1 Page - Semikron International |
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SEMIX703GAR126HDS Datasheet(HTML) 1 Page - Semikron International |
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1 / 5 page  SEMiX703GAR126HDs © by SEMIKRON Rev. 0 – 16.04.2010 1 SEMiX® 3s GAR Trench IGBT Modules SEMiX703GAR126HDs Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives •UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 150 °C Tc =25°C 642 A Tc =80°C 449 A ICnom 450 A ICRM ICRM = 2xICnom 900 A VGES -20 ... 20 V tpsc VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 125 °C 10 µs Tj -40 ... 150 °C Inverse diode IF Tj = 150 °C Tc =25°C 561 A Tc =80°C 384 A IFnom 450 A IFRM IFRM = 2xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj =25°C 2900 A Tj -40 ... 150 °C Freewheeling diode IF Tj = 150 °C Tc =25°C 533 A Tc =80°C 367 A IFnom 450 A IFRM IFRM = 2xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj =25°C 2900 A Tj -40 ... 150 °C Module It(RMS) 600 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =450 A VGE =15V chiplevel Tj =25°C 1.7 2.1 V Tj = 125 °C 22.45 V VCE0 Tj =25°C 11.2 V Tj = 125 °C 0.9 1.1 V rCE VGE =15V Tj =25°C 1.6 2.0 mΩ Tj = 125 °C 2.4 3.0 mΩ VGE(th) VGE=VCE, IC =18mA 5 5.8 6.5 V ICES VGE =0V VCE = 1200 V Tj =25°C 0.1 0.3 mA Tj = 125 °C mA Cies VCE =25 V VGE =0V f=1MHz 32.3 nF Coes f=1MHz 1.69 nF Cres f=1MHz 1.46 nF QG VGE =- 8 V...+ 15 V 3600 nC RGint Tj =25°C 1.67 Ω |
Similar Part No. - SEMIX703GAR126HDS_10 |
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