SEMIX604GB12E4S datasheet(2/5 Pages) SEMIKRON

Part #	SEMIX604GB12E4S

Description	Trench IGBT Modules

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Manufacturer	SEMIKRON [Semikron International]

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SEMiX604GB12E4s

2

Rev. 0 – 05.05.2010

Characteristics

Symbol

Conditions

min.

typ.

max.

Unit

Inverse diode

VF = VEC

IF =600 A

VGE =0V

chip

Tj =25°C

2.1

2.46

V

Tj = 150 °C

2.1

2.4

V

VF0

Tj =25°C

1.1

1.3

1.5

V

Tj = 150 °C

0.7

0.9

1.1

V

rF

Tj =25°C

1.1

1.4

1.6

mΩ

Tj = 150 °C

1.7

1.9

2.1

mΩ

IRRM

IF =600 A

di/dtoff = 6000 A/µs

VGE =-15 V

VCC = 600 V

Tj = 150 °C

430

A

Qrr

Tj = 150 °C

100

µC

Err

Tj = 150 °C

44

mJ

Rth(j-c)

per diode

0.086

K/W

Module

LCE

22

nH

RCC'+EE'

res., terminal-chip

TC =25°C

0.7

mΩ

TC = 125 °C

1mΩ

Rth(c-s)

per module

0.03

K/W

Ms

to heat sink (M5)

3

5

Nm

Mt

to terminals (M6)

2.5

5

Nm

w

400

g

Temperatur Sensor

R100

Tc=100°C (R25=5 kΩ)

493 ± 5%

Ω

B100/125

R(T)=R100exp[B100/125(1/T-1/T100)];

T[K];

3550

±2%

K

SEMiX® 4s

GB

Trench IGBT Modules

SEMiX604GB12E4s

Features

• Homogeneous Si

• Trench = Trenchgate technology

•VCE(sat) with positive temperature

coefficient

• High short circuit capability

• UL recognized, file no. E63532

Typical Applications*

• AC inverter drives

•UPS

• Electronic Welding

Remarks

• Case temperature limited to TC=125°C

max.

• Product reliability results are valid for

Tj=150°C

• Dynamic values apply to the

following combination of resistors:

RGon,main = 1,0 Ω

RGoff,main = 6,2 Ω

RG,X = 2,2 Ω

RE,X = 0,5 Ω

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