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SEMIX604GB12E4S Datasheet(PDF) 1 Page - Semikron International |
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SEMIX604GB12E4S Datasheet(HTML) 1 Page - Semikron International |
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1 / 5 page  SEMiX604GB12E4s © by SEMIKRON Rev. 0 – 05.05.2010 1 SEMiX® 4s GB Trench IGBT Modules SEMiX604GB12E4s Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives •UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0 Ω RGoff,main = 6,2 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 175 °C Tc =25°C 916 A Tc =80°C 704 A ICnom 600 A ICRM ICRM = 3xICnom 1800 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =25°C 707 A Tc =80°C 529 A IFnom 600 A IFRM IFRM = 3xIFnom 1800 A IFSM tp = 10 ms, sin 180°, Tj =25°C 3240 A Tj -40 ... 175 °C Module It(RMS) 600 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =600 A VGE =15V chiplevel Tj =25°C 1.8 2.05 V Tj = 150 °C 2.2 2.4 V VCE0 Tj =25°C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE VGE =15V Tj =25°C 1.7 1.9 mΩ Tj = 150 °C 2.5 2.7 mΩ VGE(th) VGE=VCE, IC =24mA 5 5.8 6.5 V ICES VGE =0V VCE = 1200 V Tj =25°C 0.12 0.36 mA Tj = 150 °C mA Cies VCE =25 V VGE =0V f=1MHz 37.2 nF Coes f=1MHz 2.32 nF Cres f=1MHz 2.04 nF QG VGE =- 8 V...+ 15 V 3400 nC RGint Tj =25°C 1.25 Ω td(on) VCC = 600 V IC =600 A RG on =1.7 Ω RG off =6.9 Ω di/dton = 7100 A/µs di/dtoff = 6350 A/µs Tj = 150 °C 374 ns tr Tj = 150 °C 85 ns Eon Tj = 150 °C 35 mJ td(off) Tj = 150 °C 1277 ns tf Tj = 150 °C 114 ns Eoff Tj = 150 °C 110.4 mJ Rth(j-c) per IGBT 0.049 K/W |
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