SEMIX453GB12VS datasheet(1/5 Pages) SEMIKRON

Part #	SEMIX453GB12VS

Description	Trench IGBT Modules

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Manufacturer	SEMIKRON [Semikron International]

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SEMiX453GB12Vs

Rev. 2 – 16.02.2011

1

SEMiX® 3s

GB

SEMiX453GB12Vs

Features

• Homogeneous Si

•VCE(sat) with positive temperature

coefficient

• High short circuit capability

• UL recognised file no. E63532

Typical Applications*

•AC inverter drives

•UPS

• Electronic Welding

Remarks

• Case temperature limited to TC=125°C

max.

• Product reliability results are valid for

Tj=150°C

• Dynamic values apply to the

following combination of resistors:

RGon,main = 0,5 

RGoff,main = 0,5 

RG,X = 2,2 

RE,X = 0,5 

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

VCES

1200

V

IC

Tj = 175 °C

Tc =25 °C

673

A

Tc =80 °C

513

A

ICnom

450

A

ICRM

ICRM = 3xICnom

1350

A

VGES

-20 ... 20

V

tpsc

VCC = 600 V

VGE ≤ 15 V

VCES ≤ 1200 V

Tj =125 °C

10

µs

Tj

-40 ... 175

°C

Inverse diode

IF

Tj = 175 °C

Tc =25 °C

516

A

Tc =80 °C

385

A

IFnom

450

A

IFRM

IFRM = 3xIFnom

1350

A

IFSM

tp = 10 ms, sin 180°, Tj =25°C

2430

A

Tj

-40 ... 175

°C

Module

It(RMS)

Tterminal =80 °C

600

A

Tstg

-40 ... 125

°C

Visol

AC sinus 50Hz, t = 1 min

4000

V

Characteristics

Symbol Conditions

min.

typ.

max.

Unit

IGBT

VCE(sat)

IC =450 A

VGE =15 V

chiplevel

Tj =25 °C

1.75

2.2

V

Tj =150 °C

2.2

2.5

V

VCE0

Tj =25 °C

0.94

1.04

V

Tj =150 °C

0.88

0.98

V

rCE

VGE =15 V

Tj =25 °C

1.8

2.6

m

Tj =150 °C

2.9

3.4

m

VGE(th)

VGE=VCE, IC = 18 mA

5.5

6

6.5

V

ICES

VGE =0 V

VCE = 1200 V

Tj =25 °C

0.1

0.3

mA

Tj =150 °C

mA

Cies

VCE =25V

VGE =0 V

f=1MHz

27.0

nF

Coes

f=1MHz

2.66

nF

Cres

f=1MHz

2.65

nF

QG

VGE = - 8 V...+ 15 V

4950

nC

RGint

Tj =25°C

1.67



td(on)

VCC = 600 V

IC =450 A

VGE =±15 V

RG on =1.4 

RG off =1.4 

di/dton = 6400 A/µs

di/dtoff =4000 A/µs

du/dtoff = 6600 V/

µs

Tj =150 °C

470

ns

tr

Tj =150 °C

72

ns

Eon

Tj =150 °C

39.8

mJ

td(off)

Tj =150 °C

665

ns

tf

Tj =150 °C

109

ns

Eoff

Tj =150 °C

54.4

mJ

Rth(j-c)

per IGBT

0.067

K/W

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