Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Prelim. 8/96

2N5014

SILICON EPITAXIAL

NPN TRANSISTOR

FEATURES

General purpose power transistor for switch-

ing and linear applications in a hermetic

TO–39 package.

Collector – Base Voltage

Collector – Emitter Voltage

R = 10

W

Emitter – Base Reverse Voltage

Continuous Collector Current

Total Device Dissipation

Maximum Operating Junction Temperature

and Storage Temperature Range

900V

900V

5V

2W

3.5A

200°C

-55 to 200°C

MECHANICAL DATA

Dimensions in mm (inches)

TO–39 PACKAGE

PIN 1 – Emitter

PIN 2 – Base

PIN 3 – Collector

0. 89

( 0 . 035)

ma x .

12. 7 0

( 0 . 500)

mi n .

6. 1 0 ( 0 . 2 40)

6. 6 0 ( 0 . 2 60)

8. 89 ( 0 . 35)

9. 40 ( 0 . 37)

7. 7 5 ( 0 . 3 05)

8. 5 1 ( 0 . 3 35)

7. 7 5 ( 0 . 3 05)

8. 5 1 ( 0 . 3 35)

di a.

0. 66 ( 0 . 026)

1. 14 ( 0 . 045)

0. 71 ( 0 . 028)

0. 86 ( 0 . 034)

2. 54

( 0 . 100)

5. 0 8 ( 0 . 2 00)

ty p .

45 °

1

2

3

Collector Base Leakage Current

hFE

D.C Current Gain

fae

0.012

20

180

20

mA

—

MHz