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IXER35N120D1 Datasheet(PDF) 4 Page - IXYS Corporation

Part # IXER35N120D1
Description  NPT3 IGBT with Diode in ISOPLUS247
PDF  4 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXER35N120D1 Datasheet(HTML) 4 Page - IXYS Corporation

  IXER35N120D1_06 Datasheet HTML 1Page - IXYS Corporation IXER35N120D1_06 Datasheet HTML 2Page - IXYS Corporation IXER35N120D1_06 Datasheet HTML 3Page - IXYS Corporation IXER35N120D1_06 Datasheet HTML 4Page - IXYS Corporation  
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© 2006 IXYS All rights reserved
IXER 35N120D1
Fig. 9
Typ. turn on energy and switching
Fig.10 Typ. turn off energy and switching
times versus gate resistor
times versus gate resistor
Fig. 11
Typ. turn off characteristics
Fig. 12
Typ. turn off characteristics
of free wheeling diode
of free wheeling diode
Fig. 7
Typ. turn on energy and switching
Fig. 8
Typ. turn off energy and switching
times versus collector current
times versus collector current
0
204060
80
0
4
8
12
16
20
0
10
20
30
40
50
60
70
80
90
100
0
204060
80
0
2
4
6
0
200
400
600
800
1000
1200
10
20
30
40
50
60
70
80
0
1
2
3
4
0
200
400
600
800
10
20
30
40
50
60
70
80
0
2
4
6
8
0
40
80
120
160
E
off
t
d(off)
t
f
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
mJ
E
on
mJ
E
off
ns
t
ns
t
mJ
ns
mJ
E
REC(off)
V
CE = 600 V
V
GE = ±15 V
I
C
= 35 A
T
VJ = 125°C
ns
Eon
tr
td(on)
Eon
tr
td(on)
V
CE = 600 V
V
GE = ±15 V
R
G =
39
Ω
T
VJ = 125°C
V
CE = 600 V
V
GE = ±15 V
I
C
= 35 A
T
VJ = 125°C
V
CE = 600 V
V
GE = ±15 V
R
G =
39
Ω
T
VJ = 125°C
E
rec(off)
0
10
20
30
40
50
60
70
0
200
400
600
800
1000
1200
1400
1600
1800
-diF/dt [A/µs]
0
50
100
150
200
250
300
350
RG=
IRM
tRR
39
Ω
56
Ω
56
Ω
75
Ω
75
Ω
VCE=600V
VGE=+-15V
Tj=125°C
IF=35A
39
Ω
24
Ω
24
Ω
15
Ω
15
Ω
0
2
4
6
8
10
12
0
200
400
600
800
1000
1200
1400
1600
1800
-diF/dt [A/µs]
I
F=
RG=
75
Ω
56
Ω
39
Ω
24
Ω
15
Ω
7,5A
70A
50A
35A
15A
T
VJ = 125°C
I
F
= 30 A
V
R
= 600 V
T
VJ = 125°C
V
R
= 600 V


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