IXFH36N55Q2 datasheet(1/5 Pages) IXYS

Part #	IXFH36N55Q2

Description	HiPerFET Power MOSFETs

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Manufacturer	IXYS [IXYS Corporation]

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

550

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

550

V

GS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C36

A

I

DM

T

C = 25°C, pulse width limited by TJM

144

A

I

AR

T

C = 25°C36

A

E

AR

T

C = 25°C50

mJ

E

AS

T

C = 25°C

2.5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

20

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C = 25°C

560

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

0.9/6 Nm/lb.in.

Weight

6

g

HiPerFETTM

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated, Low Q

g

Low R

g, High dv/dt, Low trr

Features

Double metal process for low gate

resistance

International standard packages

Epoxy meet UL 94 V-0, flammability

classification

Low R

DS (on), low Qg

Avalanche energy and current rated

Fast intrinsic rectifier

Applications

DC-DC converters

Switched-mode and resonant-mode

power supplies, >500kHz switching

DC choppers

Pulse generation

Laser drivers

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 250 µA

550

V

GS(th)

V

DS = VGS, ID = 4 mA

2.5

5.0

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±100 nA

I

DSS

V

DS = VDSS

T

J = 25°C25

µA

V

GS = 0 V

T

J = 125°C1

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 • ID25

0.18

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

DS99074A(04/04)

TO-247 AD (IXFH)

(TAB)

IXFH36N55Q2

V

DSS

= 550 V

I

D25

=

36 A

R

DS(on)

= 0.18

Ω

t

rr ≤

≤≤≤≤ 250 ns

G = Gate

S = Source

TAB = Drain

Preliminary Data Sheet

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