K6R4008C1D datasheet(5/10 Pages) SAMSUNG

Part #	K6R4008C1D

Description	512Kx8 Bit High Speed Static RAM(5.0V Operating)

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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K6R4008C1D

CMOS SRAM

PRELIMINARY

Rev. 2.0

- 5 -

July 2004

RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)

* The above parameters are also guaranteed at industrial temperature range.

** VIL(Min) = -2.0V a.c(Pulse Width

≤ 8ns) for I ≤ 20mA.

*** VIH(Max) = VCC + 2.0V a.c (Pulse Width

≤ 8ns) for I ≤ 20mA

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

VCC

4.5

5.0

5.5

V

Ground

VSS

000

V

Input High Voltage

VIH

2.2

-

VCC+0.5***

V

Input Low Voltage

VIL

-0.5**

-

0.8

V

CAPACITANCE*(TA=25°C, f=1.0MHz)

* Capacitance is sampled and not 100% tested.

Item

Symbol

Test Conditions

TYP

Max

Unit

Input/Output Capacitance

CI/O

VI/O=0V

-

8

pF

Input Capacitance

CIN

VIN=0V

-6

pF

DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)

* The above parameters are also guaranteed at industrial temperature range.

Parameter

Symbol

Test Conditions

Min

Max

Unit

Input Leakage Current

ILI

VIN=VSS to VCC

-2

2

µA

Output Leakage Current

ILO

CS=VIH or OE=VIH or WE=VIL

VOUT=VSS to VCC

-2

2

µA

Operating Current

ICC

Min. Cycle, 100% Duty

CS=VIL, VIN=VIH or VIL, IOUT=0mA

Com.

10ns

-

65

mA

Ind.

10ns

-

75

Standby Current

ISB

Min. Cycle, CS=VIH

-20

mA

ISB1

f=0MHz, CS

≥VCC-0.2V,

VIN

≥VCC-0.2V or VIN≤0.2V

-5

Output Low Voltage Level

VOL

IOL=8mA

-

0.4

V

Output High Voltage Level

VOH

IOH=-4mA

2.4

-

V

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