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2SC5200 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SC5200 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page  2SC5200 2004-07-07 3 IC – VCE Collector-emitter voltage VCE (V) IC – VBE Base-emitter voltage VBE (V) hFE – IC Collector current IC (A) Collector-emitter voltage VCE (V) Collector current IC (A) VCE (sat) – IC Safe Operating Area *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (pulsed)* DC operation Tc = 25°C 3 10 30 50 100 ms* 10 ms* 1 ms* VCEO max 100 300 1000 30 IC max (continuous) 10 1 3 5 0.1 0.3 0.5 0.03 0.05 Common emitter VCE = 5 V 0 0 Tc = 100°C 4 8 12 16 20 −25 0.4 0.8 1.2 1.6 2.0 25 Common emitter IC/IB = 10 Tc = 100°C 0.01 0.01 0.1 1 0.1 3 1 25 −25 0.3 10 100 0.03 Common emitter Tc = 25°C 0 0 IB = 10 mA 800 4 8 12 16 20 2 4 6 8 10 50 600 400 250 200 150 100 40 20 30 300 Common emitter VCE = 5 V 1 0.01 −25 25 10 30 100 300 0.1 1 10 Tc = 100°C 100 3 |
Similar Part No. - 2SC5200 |
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Similar Description - 2SC5200 |
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