4

8717B–SEEPR–6/10

Atmel AT24C32D/64D

3.

Memory Organization

Atmel AT24C32D/64D, 32/64K SERIAL EEPROM: The 32K/64K is internally organized as 128/256 pages of 32-

bytes each. Random word addressing requires a 12-/13-bit data word address.

Table 3-1.

Note:

1. This parameter is characterized and is not 100% tested

Table 3-2.

DC Characteristics

Note:

1. V

Applicable over recommended operating range from T

Symbol

Test Condition

Max

Units

Conditions

C

I/O

Input/Output Capacitance (SDA)

8

pF

V

C

IN

Input Capacitance (A0, A1, A2, SCL)

6

pF

V

Applicable over recommended operating range from: T

Symbol

Parameter

Test Condition

Min

Typ

Max

Units

V

CC1

Supply Voltage

1.7

5.5

V

I

CC1

Supply Current

V

READ at 400kHz

0.4

1.0

mA

I

CC2

Supply Current

V

WRITE at 400kHz

2.0

3.0

mA

I

SB1

Standby Current

(+1.7V option)

V

V

1.0

µA

V

6.0

µA

I

LI

Input Leakage

Current V

V

0.10

3.0

µA

I

LO

Output Leakage

Current V

V

0.05

3.0

µA

V

IL

0.6

V

V

V

IH

V

V

V

V

OL2

Output Low Level

V

I

0.4

V

V

OL1

Output Low Level

V

I

0.2

V