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2SC2983 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC2983 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page  2SC2983 2005-02-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V Collector current IC 1.5 A Base current IB 0.3 A Ta = 25°C 1.0 Collector power dissipation Tc = 25°C PC 15 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) |
Similar Part No. - 2SC2983_05 |
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Similar Description - 2SC2983_05 |
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