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MCM64Z836TQ8 Datasheet(PDF) 1 Page - Motorola, Inc |
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MCM64Z836TQ8 Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 34 page MCM64Z836 •MCM64Z918 1 MOTOROLA FAST SRAM Product Preview 256K x 36 and 512K x 18 Bit ZBT r Fast Static RAM The ZBT RAM is an 8M–bit synchronous fast static RAM designed to provide Zero Bus Turnaround r. The ZBT RAM allows 100% use of bus cycles during back–to–back read/write and write/read cycles. The MCM64Z836 (organized as 256K words by 36 bits) and the MCM64Z918 (organized as 512K words by 18 bits) are fabricated in Motorola’s high performance silicon gate CMOS tech- nology. This device integrates input registers, an output register, a 2–bit address counter, and high speed SRAM onto a single monolithic circuit for reduced parts count in communication applications. Synchronous design allows precise cycle control with the use of an external positive–edge–triggered clock (CK). CMOS circuitry reduces the overall power consumption of the integrated functions for greater reliability. Addresses (SA), data inputs (DQ), and all control signals except output enable (G) and linear burst order (LBO) are clock (CK) controlled through positive– edge–triggered noninverting registers. Write cycles are internally self–timed and are initiated by the rising edge of the clock (CK) input. This feature eliminates complex off–chip write pulse generation and provides increased timing flexibility for incoming signals. Write data is supplied to the memory one cycle after the write sequence initiation for the flow– through device, and two cycles after the write sequence initiation for the pipelined device. For flow–through read cycles, the SRAM allows output data to simply flow freely from the memory array. For pipelined read cycles, the SRAM output data is temporarily stored by an edge–triggered output register and then released to the output buffers at the next rising edge of clock (CK). The MCM64Z836 and MCM64Z918 operate from a 2.5 V core power supply and all outputs oper- ate on a 2.5 V power supply. All inputs and outputs are JEDEC Standard JESD8–5 compatible. • 2.5 V ±200 mV Core Power Supply, 2.5 V I/O Supply • MCM64Z836/918–7 = 7 ns Flow–Through Access/2.6 ns Pipelined Access (225 MHz) MCM64Z836 / 918–8 = 8 ns Flow–Through Access / 3 ns Pipelined Access (200 MHz) MCM64Z836 / 918–8.5 = 8.5 ns Flow–Through Access / 3.5 ns Pipelined Access (166 MHz) • Selectable Read/Write Functionality (Flow–Through/Pipelined) • Selectable Burst Sequencing Order (Linear/Interleaved) • Internally Self–Timed Write Cycle • Two–Cycle Deselect (Pipelined) • Byte Write Control • ADV Controlled Burst • Simplified JTAG • 100–Pin TQFP and 119–Bump PBGA Packages ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc., and the architecture is supported by Micron Technology, Inc. and Motorola, Inc. This document contains information on a new product under development. Motorola reserves the right to change or discontinue this product without notice. Order this document by MCM64Z836/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM64Z836 MCM64Z918 TQ PACKAGE TQFP CASE 983A–01 ZP PACKAGE PBGA CASE 999–02 REV 3 9/1/99 © Motorola, Inc. 1999 Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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