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FS75R12W2T4 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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FS75R12W2T4 Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 9 page  3 Technische Information / technical information FS75R12W2T4 IGBT-Module IGBT-modules prepared by: DK approved by: MB date of publication: 2009-10-30 revision: 2.3 Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage TÝÎ = 25°C Vçç¢ 1200 V Dauergleichstrom DC forward current IŒ 75 A Periodischer Spitzenstrom repetitive peak forward current t« = 1 ms IŒç¢ 150 A Grenzlastintegral I²t - value Vç = 0 V, t« = 10 ms, TÝÎ = 125°C Vç = 0 V, t« = 10 ms, TÝÎ = 150°C I²t 1050 985 A²s A²s Charakteristische Werte / characteristic values min. typ. max. Durchlassspannung forward voltage IŒ = 75 A, V•Š = 0 V IŒ = 75 A, V•Š = 0 V IŒ = 75 A, V•Š = 0 V VŒ 1,70 1,65 1,65 2,15 V V V TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Rückstromspitze peak reverse recovery current IŒ = 75 A, - diŒ/dt = 2800 A/ s (TÝÎ=150°C) Vç = 600 V V•Š = -15 V Iç¢ 115 120 125 A A A TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Sperrverzögerungsladung recovered charge IŒ = 75 A, - diŒ/dt = 2800 A/ s (TÝÎ=150°C) Vç = 600 V V•Š = -15 V QØ 8,60 14,0 16,0 C C C TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Abschaltenergie pro Puls reverse recovery energy IŒ = 75 A, - diŒ/dt = 2800 A/ s (TÝÎ=150°C) Vç = 600 V V•Š = -15 V EØþÊ 2,60 4,50 5,50 mJ mJ mJ TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Innerer Wärmewiderstand thermal resistance, junction to case pro Diode / per diode RÚÌœ† 0,55 0,65 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Diode / per diode ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K) RÚ̆™ 0,75 K/W NTC-Widerstand / NTC-thermistor Charakteristische Werte / characteristic values min. typ. max. Nennwiderstand rated resistance T† = 25°C Rèë 5,00 k Abweichung von Ræåå deviation of Ræåå T† = 100°C, Ræåå = 493  ÆR/R -5 5 % Verlustleistung power dissipation T† = 25°C Pèë 20,0 mW B-Wert B-value Rè = Rèë exp [Bèëõëå(1/Tè - 1/(298,15 K))] Bèëõëå 3375 K B-Wert B-value Rè = Rèë exp [Bèëõîå(1/Tè - 1/(298,15 K))] Bèëõîå 3411 K B-Wert B-value Rè = Rèë exp [Bèëõæåå(1/Tè - 1/(298,15 K))] Bèëõæåå 3433 K Angaben gemäß gültiger Application Note. Specification according to the valid application note. |
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