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FGA20N120FTD Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FGA20N120FTD Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 9 page  2 www.fairchildsemi.com FGA20N120FTD Rev. A Package Marking and Ordering Information Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted Device Marking Device Package Reel Size Tape Width Quantity FGA20N120FTD FGA20N120FTDTU TO-3PN - - 30 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 - - V ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±250 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 20mA, VCE = VGE 3.5 5.9 7.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V TC = 25 oC - 1.60 2.00 V IC = 20A, VGE = 15V, TC = 125 oC - 1.85 - V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 3080 - pF Coes Output Capacitance - 95 - pF Cres Reverse Transfer Capacitance - 60 - pF Switching Characteristics td(on) Turn-On Delay Time VCC = 600V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25 oC - 30 - ns tr Rise Time - 79 - ns td(off) Turn-Off Delay Time - 143 - ns tf Fall Time - 217 320 ns Eon Turn-On Switching Loss - 0.42 - mJ Eoff Turn-Off Switching Loss - 0.71 1.05 mJ Ets Total Switching Loss - 1.13 - mJ td(on) Turn-On Delay Time VCC = 600V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 125 oC - 29 - ns tr Rise Time - 93 - ns td(off) Turn-Off Delay Time - 147 - ns tf Fall Time - 259 - ns Eon Turn-On Switching Loss - 0.47 - mJ Eoff Turn-Off Switching Loss - 0.86 - mJ Ets Total Switching Loss - 1.33 - mJ Qg Total Gate Charge VCE = 600V, IC = 20A, VGE = 15V - 137 - nC Qge Gate to Emitter Charge - 23 - nC Qgc Gate to Collector Charge - 65 - nC |
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