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FGA20N120FTD Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part # FGA20N120FTD
Description  1200V, 20A Trench IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGA20N120FTD Datasheet(HTML) 5 Page - Fairchild Semiconductor

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FGA20N120FTD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
Figure 11. Turn-on Characteristics vs.
Figure 12. Turn-off Characteristics vs.
0
4
8
121620
0
4
8
12
16
20
IC = 10A
20A
40A
Common Emitter
TC = 125
o
C
Gate-Emitter Voltage, VGE [V]
110
0
1000
2000
3000
4000
5000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25
o
C
C
res
C
oes
C
ies
Collector-Emitter Voltage, VCE [V]
30
0
306090
120
150
0
3
6
9
12
15
Common Emitter
TC = 25
o
C
600V
400V
V
CC = 200V
Gate Charge, Qg [nC]
1
10
100
1000
0.01
0.1
1
10
100
1ms
10 ms
DC
*Notes:
1. TC = 25
o
C
2. TJ = 150
o
C
3. Single Pulse
10µs
100µs
Collector-Emitter Voltage, VCE [V]
2000
0
20
406080
100
10
100
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25
o
C
TC = 125
o
C
t
d(on)
t
r
Gate Resistance, RG [Ω]
300
0
20406080
100
100
1000
2000
70
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25
o
C
TC = 125
o
C
t
d(off)
t
f
Gate Resistance, RG [Ω]
Gate Resistance
Gate Resistance


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