BAS116LT1G datasheet(2/3 Pages) ONSEMI

Part #	BAS116LT1G

Description	Switching Diode

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Manufacturer	ONSEMI [ON Semiconductor]

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BAS116LT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage (IBR = 100 mAdc)

V(BR)

75

−

Vdc

Reverse Voltage Leakage Current (VR = 75 Vdc)

Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150°C)

IR

−

5.0

80

nAdc

Forward Voltage (IF = 1.0 mAdc)

Forward Voltage (IF = 10 mAdc)

Forward Voltage (IF = 50 mAdc)

Forward Voltage (IF = 150 mAdc)

VF

−

900

1000

1100

1250

mV

Diode Capacitance (VR = 0 V, f = 1.0 MHz)

CD

−

2.0

pF

Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1)

trr

−

3.0

ms

1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

3. tp » trr

+10 V

2.0 k

820

W

0.1

mF

DUT

VR

100

mH

0.1

mF

50 W Output

Pulse

Generator

50

W INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

t

10%

90%

IF

IR

trr

t

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

IF

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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