fga25n120antd_07 datasheet(6/9 Pages) FAIRCHILD

Part #	FGA25N120ANTD

Description	1200V NPT Trench IGBT

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2

Typical Performance Characteristics (Continued)

Figure 13. Switching Loss vs. Collector Current

Figure 14. Gate Charge Characteristics

10

20

30

40

50

0.1

1

10

Common Emitter

V

GE

= ±15V, R

G

= 10Ω

T

C

= 25°C

T

C

= 125°C

Eon

Eoff

Collector Current, I

C

[A]

0

20

40

60

80

100

120

140

160

180

200

0

2

4

6

8

10

12

14

16

600V

400V

Common Emitter

R

L

= 24Ω

T

C

= 25°C

Vcc = 200V

Gate Charge, Q

g

[nC]

Figure 15. SOA Characteristics

Figure 16. Turn-Off SOA

1

10

100

1000

1

10

100

Safe Operating Area

V

GE

= 15V, T

C

= 125°C

Collector-Emitter Voltage, V

CE

[V]

0.1

1

10

100

1000

0.01

0.1

1

10

100

50µs

100µs

1ms

DC Operation

Ic MAX (Pulsed)

Ic MAX (Continuous)

Single Nonrepetitive

Pulse T

C

= 25°C

Curves must be derated

linearly with increase

in temperature

Collector - Emitter Voltage, V

CE

[V]

Figure 17. Transient Thermal Impedance of IGBT

1 E - 5

1 E - 4

1 E - 3

0 . 0 1

0 . 1

1

1 0

1 E - 3

0 . 0 1

0 . 11

1 0

0.1

0.5

0.2

0.05

0.02

0.01

single pulse

R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ]

Pdm

t1

t2

Duty factor D = t1 / t2

Peak Tj = Pdm

× Zthjc + T

C

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