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FGA25N120ANTD Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FGA25N120ANTD Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 9 page  2 www.fairchildsemi.com FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGA25N120ANTD FGA25N120ANTD TO-3P -- -- 30 Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 3 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 250 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 25mA, VCE = VGE 3.5 5.5 7.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 25A, VGE = 15V -- 2.0 2.5 V IC = 25A, VGE = 15V, TC = 125°C -- 2.15 -- V IC = 50A, VGE = 15V -- 2.65 -- V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 3700 -- pF Coes Output Capacitance -- 130 -- pF Cres Reverse Transfer Capacitance -- 80 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 600 V, IC = 25A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C -- 50 -- ns tr Rise Time -- 60 90 ns td(off) Turn-Off Delay Time -- 190 -- ns tf Fall Time -- 100 180 ns Eon Turn-On Switching Loss -- 4.1 6.2 mJ Eoff Turn-Off Switching Loss -- 0.96 1.5 mJ Ets Total Switching Loss -- 5.06 7.7 mJ td(on) Turn-On Delay Time VCC = 600 V, IC = 25A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C -- 50 -- ns tr Rise Time -- 60 -- ns td(off) Turn-Off Delay Time -- 200 -- ns tf Fall Time -- 154 -- ns Eon Turn-On Switching Loss -- 4.3 6.9 mJ Eoff Turn-Off Switching Loss -- 1.5 2.4 mJ Ets Total Switching Loss -- 5.8 9.3 mJ Qg Total Gate Charge VCE = 600 V, IC = 25A, VGE = 15V -- 200 300 nC Qge Gate-Emitter Charge -- 15 23 nC Qgc Gate-Collector Charge -- 100 150 nC Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature |
Similar Part No. - FGA25N120ANTD_07 |
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Similar Description - FGA25N120ANTD_07 |
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