©2007 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2

u

FGA25N120ANTD/FGA25N120ANTD_F109

1200V NPT Trench IGBT

Features

• NPT Trench Technology, Positive temperature coefficient

• Extremely enhanced avalanche capability

Description

Using Fairchild's proprietary trench design and advanced NPT

technology, the 1200V NPT IGBT offers superior conduction

and switching performances, high avalanche ruggedness and

easy parallel operation.

This device is well suited for the resonant or soft switching appli-

cation such as induction heating, microwave oven, etc.

G

C

E

G

C

E

G C E

TO-3PN

Absolute Maximum Ratings

Symbol

Description

FGA25N120ANTD

Units

Collector-Emitter Voltage

1200

V

Gate-Emitter Voltage

± 20

V

Collector Current

50

A

Collector Current

25

A

90

A

Diode Continuous Forward Current

25

A

Diode Maximum Forward Current

150

A

Maximum Power Dissipation

312

W

Maximum Power Dissipation

125

W

Operating Junction Temperature

-55 to +150

°C

Storage Temperature Range

-55 to +150

°C

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Units

Thermal Resistance, Junction-to-Case for IGBT

--

0.4

°C/W

Thermal Resistance, Junction-to-Case for Diode

--

2.0

°C/W

Thermal Resistance, Junction-to-Ambient

--

40

°C/W

tm

July, 2007