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FGA25N120ANTD Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part # FGA25N120ANTD
Description  1200V NPT Trench IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGA25N120ANTD Datasheet(HTML) 5 Page - Fairchild Semiconductor

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FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
0
102030
40506070
10
100
Common Emitter
V
CC
= 600V, V
GE
= ±15V
I
C
= 25A
T
C
= 25°C
T
C
= 125°C
td(on)
tr
Gate Resistance, R
G
[Ω]
110
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
Ciss
Coss
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25°C
Crss
Collector-Emitter Voltage, V
CE
[V]
Figure 9. Turn-Off Characteristics vs.
Figure 10. Switching Loss vs. Gate Resistance
Gate Resistance
0
102030
40506070
1
10
Common Emitter
V
CC
= 600V, V
GE
= ±15V
I
C
= 25A
T
C
= 25°C
T
C
= 125°C
Eon
Eoff
Gate Resistance, R
G
[Ω]
0
10
2030
40
506070
10
100
1000
Common Emitter
V
CC
= 600V, V
GE
= ±15V
I
C
= 25A
T
C
= 25°C
T
C
= 125°C
td(off)
tf
Gate Resistance, R
G
[Ω]
Figure 11. Turn-On Characteristics vs.
Figure 12. Turn-Off Characteristics vs.
Collector Current
Collector Current
10
20
30
40
50
100
Common Emitter
V
GE
= ±15V, R
G
= 10Ω
T
C
= 25°C
T
C
= 125°C
tr
td(on)
Collector Current, I
C
[A]
10
20
30
40
50
100
Common Emitter
V
GE
= ±15V, R
G
= 10Ω
T
C
= 25°C
T
C
= 125°C
td(off)
tf
Collector Current, I
C
[A]


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