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FGA25N120ANTD Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part # FGA25N120ANTD
Description  1200V NPT Trench IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGA25N120ANTD Datasheet(HTML) 4 Page - Fairchild Semiconductor

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FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage
01
2
3
45
0
20
40
60
80
100
120
Common Emitter
V
GE
= 15V
T
C
= 25°C
T
C
= 125°C
Collector-Emitter Voltage, V
CE
[V]
02
4
68
10
0
20
40
60
80
100
120
140
160
180
10V
9V
8V
7V
20V
17V
15V 12V
V
GE
= 6V
T
C
= 25°C
Collector-Emitter Voltage, V
CE
[V]
Characteristics
Figure 3. Saturation Voltage vs. Case
Figure 4. Saturation Voltage vs. VGE
Temperature at Variant Current Level
25
50
75
100
125
1.5
2.0
2.5
3.0
Common Emitter
V
GE
= 15V
40A
I
C
= 25A
Case Temperature, T
C
[°C]
0
4
8
12
16
20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= -40°C
I
C
= 12.5A
Gate-Emitter Voltage, V
GE
[V]
Figure 5. Saturation Voltage vs. VGE
0
4
8
12
16
20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= 125°C
I
C
= 12.5A
Gate-Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= 25°C
I
C
= 12.5A
Gate-Emitter Voltage, V
GE
[V]
Figure 6. Saturation Voltage vs. VGE


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