STD20NF20_09 datasheet(5/15 Pages) STMICROELECTRONICS

Part #	STD20NF20

Description	N-channel 200 V, 0.10 廓, 18 A DPAK, TO-220, TO-220FP low gate charge STripFET??Power MOSFET

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STD20NF20, STF20NF20, STP20NF20

Electrical characteristics

Doc ID 13154 Rev 4

5/15

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

(pulsed)

-

18

72

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward on voltage

ISD = 20 A, VGS = 0

-

1.6

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 20 A, di/dt = 100A/µs

VDD = 50 V

(see Figure 20)

-

155

775

10

ns

nC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 20 A, di/dt = 100 A/µs

VDD = 50 V, Tj = 150 °C

(see Figure 20)

-

183

1061

11.6

ns

nC

A

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