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313079-001 Datasheet(PDF) 81 Page - Intel Corporation |
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313079-001 Datasheet(HTML) 81 Page - Intel Corporation |
81 / 104 page ![]() Dual-Core Intel® Xeon® Processor 5000 Series Datasheet 81 Thermal Specifications . Notes: 1. Intel does not support or recommend operation of the thermal diode under reverse bias. 2. Same as IFW in the diode model in Table 6-9. 3. Characterized across a temperature range of 50-80°C. 4. Not 100% tested. Specified by design characterization. 5. The ideality factor, nQ, represents the deviation from ideal transistor model behavior as exemplified by the equation for the collector current: IC = IS * (eqVBE/nQkT - 1) Where IS = saturation current, q = electronic charge, VBE = voltage across the transistor based emitter junction (same nodes as VD ), k = Boltzmann Constant, and T = absolute temperature (Kelvin). 6. The series resistance, RT provided in Table 6-9 can be used for more accurate readings as needed. Notes: 1. See the Dual-Core Intel® Xeon® Processor 5000 Series Thermal/Mechanical Design Guidelines for more information on how to use the Tdiode_Offset, Tdiode_Base and ntrim parameters for fan speed control. § Table 6-10. Thermal Diode Interface Land Name Land Number Description THERMDA AL1 diode anode THERMDC AK1 diode cathode THERMDA2 AJ7 diode anode THERMDC2 AH7 diode cathode Table 6-11. Thermal Diode Parameters using Transistor Model Symbol Parameter Min Typ Max Unit Notes IFW Forward Bias Current 5 - 200 µA 1, 2 IE Emitter Current 5 - 200 µA nQ Transistor Ideality 0.997 1.001 1.005 - 3, 4, 5 Beta - 0.391 - 0.760 - 3, 4 RT Series Resistance 2.79 4.52 6.24 Ω 3, 6 Table 6-12. Parameters for Tdiode Correction Factor Symbol Parameter Typ Unit Notes ntrim Diode Ideality used to calculate Tdiode_Offset 1.008 1 Tdiode_Base 0 °C 1 |
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