ixta3n50d2 datasheet(4/5 Pages) IXYS

Part #	IXTA3N50D2

Description	Depletion Mode MOSFET

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Manufacturer	IXYS [IXYS Corporation]

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IXTA3N50D2

IXTP3N50D2

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 7. Normalized RDS(on) vs. Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

-50

-25

0

25

50

75

100

125

150

TJ - Degrees Centigrade

VGS = 0V

I D = 1.5A

Fig. 8. RDS(on) Normalized to ID = 1.5A Value

vs. Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

01

23

456

78

9

10

ID - Amperes

VGS = 0V

5V - - - -

TJ = 125ºC

TJ = 25ºC

Fig. 9. Input Admittance

0

1

2

3

4

5

6

7

8

9

10

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

0.0

0.5

1.0

VGS - Volts

TJ = 125ºC

25ºC

- 40ºC

VDS = 30V

Fig. 10. Transconductance

0

1

2

3

4

5

6

01

2

3

456

7

8

9

10

ID - Amperes

TJ = - 40ºC

VDS = 30V

25ºC

125ºC

Fig. 12. Forward Voltage Drop of

Intrinsic Diode

0

1

2

3

4

5

6

7

8

9

10

0.4

0.5

0.6

0.7

0.8

0.9

VSD - Volts

TJ = 125ºC

VGS = -10V

TJ = 25ºC

Fig. 11. Breakdown and Threshold Voltages

vs. Junction Temperature

0.8

0.9

1.0

1.1

1.2

1.3

1.4

-50

-25

0

25

50

75

100

125

150

TJ - Degrees Centigrade

VGS(off) @ VDS = 25V

BVDSX @ VGS = - 5V

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