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IRF7105 Datasheet(PDF) 1 Page - International Rectifier |
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IRF7105 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  IRF7105 HEXFET® Power MOSFET 07/18/03 l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Description Max. N-Channel P-Channel ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.5 -2.3 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.8-1.8 IDM Pulsed Drain Current 14 -10 PD @TC = 25°C Power Dissipation 2.0 Linear Derating Factor 0.016 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 3.0 -3.0 V/nS TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C Parameter Units A Absolute Maximum Ratings W Parameter Min. Typ. Max. Units RθJA Maximum Junction-to-Ambient 62.5 °C/W Thermal Resistance Ratings N-Ch P-Ch VDSS 25V -25V RDS(on) 0.10Ω 0.25Ω ID 3.5A -2.3A D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 P-CHANNEL MOSFET N-CHANNEL MOSFET www.irf.com 1 PD - 91097E |
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