RJH60F5DPK datasheet(1/7 Pages) RENESAS

Part #	RJH60F5DPK

Description	Silicon N Channel IGBT High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS0055EJ0200 Rev.2.00

Page 1 of 6

Jul 23, 2010

Preliminary Datasheet

RJH60F5DPK

Silicon N Channel IGBT

High Speed Power Switching

Features

 Low collector to emitter saturation voltage

VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)

 Built in fast recovery diode in one package

 Trench gate and thin wafer technology

 High speed switching

tr = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 , Ta = 25°C)

Outline

1. Gate

2. Collector

3. Emitter

4. Collector (Flange)

C

G

E

RENESAS Package code: PRSS0004ZE-A

(Package name: TO-3P)

1

2

3

4

Absolute Maximum Ratings

(Tc = 25°C)

Item

Symbol

Ratings

Unit

Collector to emitter voltage

VCES

600

V

Gate to emitter voltage

VGES

±30

V

Tc = 25 °C

IC

80

A

Collector current

Tc = 100 °C

IC

40

A

Collector peak current

ic(peak)

Note1

160

A

Collector to emitter diode forward peak current

iDF(peak)

Note2

100

A

Collector dissipation

PC

260.4

W

Junction to case thermal impedance (IGBT)

j-c

0.48

°C/W

Junction to case thermal impedance (Diode)

j-c

2.0

°C/W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. Pulse width limited by safe operating area.

2. PW

 5 s, duty cycle  1%

R07DS0055EJ0200

(Previous: REJ03G1836-0100)

Rev.2.00

Jul 23, 2010

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