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2SD600 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SD600 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 3 page SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. PNP/NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications Ordering number:346G 2SB631,631K/2SD600,600K 91098HA (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346–1/4 r e t e m a r a Pl o b m y Ss n o i t i d n o C0 0 6 D , 1 3 6 B S 2K 0 0 6 D , K 1 3 6 B S 2t i n U e g a t l o V e s a B - o t - r o t c e ll o CV O B C 0 0 1 ) – (0 2 1 ) – (V e g a t l o V r e t t i m E - o t - r o t c e ll o CV O E C 0 0 1 ) – (0 2 1 ) – (V e g a t l o V e s a B - o t - r e t t i m EV O B E 5 ) – (V t n e r r u C r o t c e ll o CIC 1 ) – (A ) e s l u P ( t n e r r u C r o t c e ll o CI P C 2 ) – (A n o i t a p i s s i D r o t c e ll o CPC 1W 8W e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – ( ) : 2SB631, 631K Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. ˚C ˚C Electrical Characteristics at Ta = 25˚C 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Tc=25˚C r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m e g a t l o V n w o d k a e r B e s a B - o t - r o t c e ll o CV O B C ) R B ( IC I , A µ 0 1 ) – ( = E 0 = 0 0 6 D , 1 3 6 B0 0 1 ) – (V K 0 0 6 D , K 1 3 6 B0 2 1 ) – (V e g a t l o V n w o d k a r B r e t t i m E - o t - r o t c e ll o CV O E C ) R B ( IC R , A m 1 ) – ( = E B =∞ 0 0 6 D , 1 3 6 B0 0 1 ) – (V K 0 0 6 D , K 1 3 6 B0 2 1 ) – (V e g a t l o V n w o d k a e r B e s a B - o t - r e t t i m EV O B E ) R B ( IE I , A µ 0 1 ) – ( = C 0 =5 ) – (V t n e r r u C f f o t u C r o t c e ll o CI O B C V B C I , V 0 5 ) – ( = E 0 =1 ) – (A µ t n e r r u C f f o t u C r e t t i m EI O B E V B E I , V 4 ) – ( = C 0 =1 ) – (A µ |
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