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K4S281632D Datasheet(PDF) 9 Page - Samsung semiconductor |
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K4S281632D Datasheet(HTML) 9 Page - Samsung semiconductor |
9 / 11 page CMOS SDRAM K4S281632D Rev. 0.1 Sept. 2001 IOH Characteristics (Pull-up) Voltage 100MHz 133MHz Min 100MHz 133MHz Max 66MHz Min (V) I (mA) I (mA) I (mA) 3.45 -2.4 3.3 -27.3 3.0 0.0 -74.1 -0.7 2.6 -21.1 -129.2 -7.5 2.4 -34.1 -153.3 -13.3 2.0 -58.7 -197.0 -27.5 1.8 -67.3 -226.2 -35.5 1.65 -73.0 -248.0 -41.1 1.5 -77.9 -269.7 -47.9 1.4 -80.8 -284.3 -52.4 1.0 -88.6 -344.5 -72.5 0.0 -93.0 -502.4 -93.0 IBIS SPECIFICATION IOL Characteristics (Pull-down) Voltage 100MHz 133MHz Min 100MHz 133MHz Max 66MHz Min (V) I (mA) I (mA) I (mA) 0.0 0.0 0.0 0.0 0.4 27.5 70.2 17.7 0.65 41.8 107.5 26.9 0.85 51.6 133.8 33.3 1.0 58.0 151.2 37.6 1.4 70.7 187.7 46.6 1.5 72.9 194.4 48.0 1.65 75.4 202.5 49.5 1.8 77.0 208.6 50.7 1.95 77.6 212.0 51.5 3.0 80.3 219.6 54.2 3.45 81.4 222.6 54.9 0 -100 -200 -300 -400 -500 -600 0 3 0.5 1 1.5 2 2.5 3.5 Voltage 250 200 150 100 50 0 0 3 0.5 1 1.5 2 2.5 3.5 Voltage 66MHz and 100MHz/133MHz Pull-up 66MHz and 100MHz/133MHz Pull-down IOH Min (100MHz/133MHz) IOH Max (100MHz/133MHz) IOH Min (66MHz) IOL Min (100MHz/133MHz) IOL Max (100MHz/133MHz) IOL Min (66MHz) |
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