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K4S280432F-TL75 Datasheet(PDF) 12 Page - Samsung semiconductor |
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K4S280432F-TL75 Datasheet(HTML) 12 Page - Samsung semiconductor |
12 / 14 page SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM Rev. 1.2 May 2004 IOH Characteristics (Pull-up) Voltage 100MHz 133MHz Min 100MHz 133MHz Max (V) I (mA) I (mA) 3.45 -2.4 3.3 -27.3 3.0 0.0 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2.0 -58.7 -197.0 1.8 -67.3 -226.2 1.65 -73.0 -248.0 1.5 -77.9 -269.7 1.4 -80.8 -284.3 1.0 -88.6 -344.5 0.0 -93.0 -502.4 IBIS SPECIFICATION IOL Characteristics (Pull-down) Voltage 100MHz 133MHz Min 100MHz 133MHz Max (V) I (mA) I (mA) 0.0 0.0 0.0 0.4 27.5 70.2 0.65 41.8 107.5 0.85 51.6 133.8 1.0 58.0 151.2 1.4 70.7 187.7 1.5 72.9 194.4 1.65 75.4 202.5 1.8 77.0 208.6 1.95 77.6 212.0 3.0 80.3 219.6 3.45 81.4 222.6 0 -100 -200 -300 -400 -500 -600 03 0.5 1 1.5 2 2.5 3.5 Voltage 250 200 150 100 50 0 03 0.5 1 1.5 2 2.5 3.5 Voltage 100MHz/133MHz Pull-up 100MHz/133MHz Pull-down IOH Min (100MHz/133MHz) IOH Max (66 and 100MHz/133MHz) IOL Min (100MHz/133MHz) IOL Max (100MHz/133MHz) |
Similar Part No. - K4S280432F-TL75 |
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Similar Description - K4S280432F-TL75 |
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