SDRAM 128Mb F-die (x4, x8, x16)

CMOS SDRAM

Rev. 1.2 May 2004

DQ BUFFER OUTPUT DRIVE CHARACTERISTICS

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Notes

Output rise time

trh

Measure in linear

region : 1.2V ~ 1.8V

1.37

4.37

Volts/ns

3

Output fall time

tfh

Measure in linear

region : 1.2V ~ 1.8V

1.30

3.8

Volts/ns

3

Output rise time

trh

Measure in linear

region : 1.2V ~ 1.8V

2.8

3.9

5.6

Volts/ns

1,2

Output fall time

tfh

Measure in linear

region : 1.2V ~ 1.8V

2.0

2.9

5.0

Volts/ns

1,2

1. Rise time specification based on 0pF + 50

2. Fall time specification based on 0pF + 50

3. Measured into 50pF only, use these values to characterize to.

Notes :

1. Parameters depend on programmed CAS latency.

2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.

3. Assumed input rise and fall time (tr & tf) = 1ns.

If tr & tf is longer than 1ns, transient time compensation should be considered,

i.e., [(tr + tf)/2-1]ns should be added to the parameter.

Notes :

Parameter

Symbol

60 (x16 only)

75

Unit

Note

Min

Max

Min

Max

CLK cycle

time

CAS latency=3

6

1000

7.5

1000

ns

1

CAS latency=2

-

10

CLK to valid

output delay

CAS latency=3

55.4

ns

1,2

CAS latency=2

-

6

Output data

hold time

CAS latency=3

2.5

3

ns

2

CAS latency=2

-

3

CLK high pulse width

2.5

2.5

ns

3

CLK low pulse width

2.5

2.5

ns

3

Input setup time

1.5

1.5

ns

3

Input hold time

10.8

ns

3

CLK to output in Low-Z

11

ns

2

CLK to output

in Hi-Z

CAS latency=3

55.4

ns

CAS latency=2

-

6