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2N3904 Datasheet(PDF) 1 Page - Rohm |
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2N3904 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page ![]() UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 ! ! ! !Features 1) BVCEO > 40V (IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906 / 2N3906. ! ! ! !Package, marking and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) UMT3904 UMT3 R1A T106 3000 SST3904 SST3 R1A T116 3000 MMST3904 SMT3 R1A T146 3000 TO-92 - T93 3000 2N3904 ! ! ! !Absolute maximum ratings (Ta = 25 °C) 2N3904 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Tj Tstg Limits 60 40 6 0.2 0.35 150 −55~+150 Unit V V V A W W W PC 0.2 0.625 * °C °C * When mounted on a 7 x 5 x 0.6 mm ceramic board. SST3904, MMST3904 UMT3904, SST3904, MMST3904 ! ! ! !External dimensions (Units : mm) UMT3904 SST3904 MMST3904 2N3904 0~0.1 0.2Min. 0.95 0.45±0.1 0.15 0.4 2.9±0.2 1.9±0.2 0.95 0.95 −0.1 +0.2 +0.1 −0.06 +0.1 −0.05 (2) (1) (3) 0~0.1 1.1 0.8±0.1 0.15 0.4 2.9±0.2 1.9±0.2 0.95 0.95 −0.1 +0.2 +0.1 −0.06 +0.1 −0.05 (2) (1) (3) 0~0.1 (2) (1) (3) 0.9±0.1 0.2 0.7±0.1 0.15±0.05 0.3 2.0±0.2 1.3±0.1 0.65 0.65 +0.1 −0 4.8±0.2 3.7±0.2 5 0.45±0.1 2.3 0.5 +0.15 −0.05 2.5 +0.3 −0.1 (1) (2) (3) All terminals have same dimensions All terminals have same dimensions All terminals have same dimensions ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector ROHM : SST3 (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector ROHM : TO-92 EIAJ : SC-43 (1) Emitter (2) Base (3) Collector ! ! ! !Electrical characteristics (Ta = 25 °C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BVCBO BVCEO BVEBO ICES IEBO 60 40 6 - - - - - - - - - - 50 50 V V V nA nA IC = 10 µA IC = 1mA IE = 10 µA VCB = 30V VEB = 3V - - 0.95 Base-emitter saturation voltage VBE(sat) 0.65 - 0.85 V - - 0.3 IC/IB = 50mA/5mA Collector-emitter saturation voltage VCE(sat) - - 0.2 V IC/IB = 10mA/1mA IC/IB = 50mA/5mA IC/IB = 10mA/1mA 30 - - 60 - - DC current transfer ratio hFE 100 - 300 - 70 - - 40 - - VCE = 1V , IC = 0.1mA VCE = 1V , IC = 1mA VCE = 1V , IC = 10mA VCE = 1V , IC = 50mA VCE = 1V , IC = 100mA Transition frequency Collector output capacitance fT Cob 300 - - - - 4 MHz pF VCE = 20V , IE = −10mA, f = 100MHz VCB = 10V , f = 100kHz Emitter input capacitance Cib - - 8 pF VEB = 0.5V , f = 100kHz Delay time td - - 35 ns VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA Rise time tr - - 35 ns Storage time tstg - - 200 ns VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA Fall time tf - - 50 ns ~ |
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