NTZS3151P datasheet(4/5 Pages) ONSEMI

Part #	NTZS3151P

Description	Small Signal MOSFET ??0 V, ??50 mA, P?묬hannel SOT??63

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NTZS3151P

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

−VGS

06

3

4

1

0

QG, TOTAL GATE CHARGE (nC)

ID = −0.77 A

TJ = 25°C

5

2

3

30

10

0

QGD

10

1

10

1

100

RG, GATE RESISTANCE (W)

VDD = −25 V

ID = −0.95 A

VGS = −4.5 V

1000

5

20

td(off)

td(on)

tf

tr

−VDS

4

1

0.9

0.2

0

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

VGS = 0 V

TJ = 25°C

1.2

0.7

0.5

0.1

0.4

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

2

QT

0.8

0.6

0.4

15

5

25

QGS

VDS = 0 V

VGS = 0 V

5

10

1000

300

200

100

0

25

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ = 25°C

COSS

CISS

CRSS

500

50

400

−VGS −VDS

15

600

700

800

900

20

100

0.3

0.2

0.6

0.8

1.0

ORDERING INFORMATION

Device

Package

Shipping

NTZS3151PT1G

SOT−563

(Pb−Free)

4000 / Tape & Reel

NTZS3151PT5G

SOT−563

(Pb−Free)

8000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-

cations Brochure, BRD8011/D.

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