NTZS3151P datasheet(3/5 Pages) ONSEMI

Part #	NTZS3151P

Description	Small Signal MOSFET ??0 V, ??50 mA, P?묬hannel SOT??63

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NTZS3151P

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

−1 V

125°C

0

4

2.5

3

1.5

1

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

1.5

0.5

0

0.5

Figure 1. On−Region Characteristics

0.5

4

2

1.5

3

3.5

1.5

0.5

1

0

Figure 2. Transfer Characteristics

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.1

3

0.2

0

Figure 3. On−Resistance vs. Drain Current and

Temperature

−ID, DRAIN CURRENT (AMPS)

0

0.1

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−ID, DRAIN CURRENT (AMPS)

−50

0

−25

25

1.4

1.2

1

0.8

0.6

50

125

100

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

2

0

TJ = −55°C

0.3

0

75

150

TJ = 25°C

ID = −0.95 A

VGS = −4.5 V

2

25°C

1.8

VGS = −1.8 V

−1.2 V

14

−1.4 V

−1.6 V

0.2

VGS = −2.5 V

3.5

5

VDS ≥ −10 V

0.3

0.5

1

1.5

VGS = −3 V

VGS = −2 V

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

020

15

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS = 0 V

TJ = 150°C

TJ = 125°C

100

1000

10000

510

2

2.5

3

3.5

4

3.5

4

4.5

2.5

VGS = −4.5 V

TJ = 25°C

TJ = 125°C

TJ = −55°C

VGS = −4.5 V

1.6

3

2

1

−1.8 V

2.5

3

2

1

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