MBR4045PTG datasheet(2/4 Pages) ONSEMI

Part #	MBR4045PTG

Description	SWITCHMODE??Power Rectifier

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Manufacturer	ONSEMI [ON Semiconductor]

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MBR4045PT

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MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

45

V

Average Rectified Forward Current

(Rated VR, TC = 125°C)

Per Diode

Per Device

IF(AV)

20

40

A

Peak Repetitive Forward Current,

(Rated VR, Square Wave, 20 kHz

@ TC = 90°C) Per Diode

IFRM

40

A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase,

60 Hz)

IFSM

400

A

Peak Repetitive Reverse Current,

(2.0 ms, 1.0 kHz)

IRRM

2.0

A

Storage Temperature Range

Tstg

−65 to +175

°C

Operating Junction Temperature (Note 1)

TJ

−65 to +175

°C

Peak Surge Junction Temperature

(Forward Current Applied)

TJ(pk)

175

°C

Voltage Rate of Change

dv/dt

10,000

V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may

affect device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Characteristic

Conditions

Symbol

Max

Unit

Maximum Thermal Resistance, Junction−to−Case

Minimum Pad

RqJC

1.4

°C/W

Maximum Thermal Resistance, Junction−to−Ambient

Minimum Pad

RqJA

55

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

Instantaneous Forward Voltage (Note 2)

(iF = 20 A, TJ = 25°C)

(iF = 20 A, TJ = 125°C)

(iF = 40 A, TJ = 25°C)

(iF = 40 A, TJ = 125°C)

VF

−

0.53

0.46

0.64

0.62

0.70

0.60

0.80

0.75

V

Instantaneous Reverse Current (Note 2)

(Rated DC Voltage, TJ = 25°C)

(Rated DC Voltage, TJ = 125°C)

iR

−

0.09

30

1.0

50

mA

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