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LT6656AIS6-1.25 Datasheet(PDF) 11 Page - Linear Technology |
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LT6656AIS6-1.25 Datasheet(HTML) 11 Page - Linear Technology |
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11 / 18 page  LT6656 6656fa IL = 0 VOUT 10mV/DIV IL = 5µA 3.25V VIN 2.75V 5ms/DIV 6656 F07 Figure 7. Detailed Output Response to a 0.5V Input Step, CIN = CL = 1µF applicaTions inForMaTion The photo in Figure 7 shows the output response to a 0.5V input step in both a no-load and 5µA load condition. In the no-load condition only the bias current of the internal bandgap reference (about 400nA) is available to discharge the output capacitor. Output Noise Low frequency noise is proportional to the output voltage and is insensitive to output current and moderate levels of output capacitance. Wideband noise increases less with higher output voltage and is proportional to the bandwidth of the output stage, increasing with higher load current and lower output capacitance. Peaking in the noise response is another factor contribut- ing to the output noise level for a given frequency range. Noise peaking can be reduced by increasing the size of the outputcapacitorwhendrivingheavierloads,orconversely, reducing the size of the output capacitor when driving lighterloads.NoiseplotsintheTypicalPerformanceCurves section show noise spectrum with various load currents and output capacitances. Internal Protection The LT6656 incorporates several internal protection features that make it ideal for use in battery powered systems. Reverse input protection limits the input cur- rent to typically less than 40µA when either the LT6656 or the battery is installed backwards. In systems where the output can be held up by a backup battery with the input pulled to ground, the reverse output protection of the LT6656 limits the output current to typically less than 30µA. The current versus reverse voltage is shown in the Typical Performance Characteristics section. Long-Term Drift Long-term drift cannot be extrapolated from accelerated high temperature testing. This erroneous technique gives drift numbers that are wildly optimistic. A more realistic way to determine long-term drift is to measure it over the time interval of interest. The LT6656 drift data was taken over 100 parts that were soldered onto PC boards in a typical application configuration. The boards were then placed into a constant temperature oven with TA = 30°C, their outputs scanned regularly and measured with an 8.5 digit DVM. The parts chosen in the Long Term Drift curves in the Typical Performance Characteristics section represent high, low and typical units. Hysteresis Hysteresis on the LT6656 is measured in two steps, for example, from 25°C to –40°C to 25°C, then from 25°C to 85°C to 25°C, for the industrial temperature range. This two-step cycle is repeated several times and the maximum hysteresis from all the partial cycles is noted. Unlike other commonly used methods for specifying hysteresis, this ensures the worst-case hysteresis is included, whether it occurs in the first temperature excursion or the last. Results over both commercial and industrial temperature rangesareshowninFigure8andFigure9.Thepartscycled overthehighertemperaturerangehaveahigherhysteresis than those cycled over the lower range. Power Dissipation The LT6656 will not exceed the maximum junction tem- perature when operating within its specified temperature range of –40°C to 85°C, maximum input voltage of 18V and specified load current of 5mA. IR Reflow Shift The different expansion and contraction rates of the mate- rials that make up the LT6656 package may induce small stresses on the die that can cause the output to shift during |
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