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R5F64166HDFB Datasheet(PDF) 75 Page - Renesas Technology Corp |
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R5F64166HDFB Datasheet(HTML) 75 Page - Renesas Technology Corp |
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75 / 98 page  REJ03B0253-0110 Rev.1.10 Page 75 of 95 Jun 23, 2010 R32C/116 Group 5. Electrical Characteristics VCC =5V Switching Characteristics (VCC = 4.2 to 5.5 V, VSS = 0 V, and Ta =Topr, unless otherwise noted) Note: 1. The value is calculated by the following formulas based on the base clock cycles (tc(Base)) and respective cycles of Tsu(A-R), Tw(R), Tsu(A-W), and Tw(W) set by registers EBC0 to EBC3. If the calculation results in a negative value, modify the value to be set. For the details of how to set values, refer to the User’s manual. tsu(S-ALE) = tsu(A-ALE) = tw(ALE) = (Tsu(A-R) - 0.5) × tc(Base) -15 [ns] tw(R) = Tw(R) × tc(Base) -10 [ns] tw(W) = tsu(D-W) = Tw(W) × tc(Base) -10 [ns] Table 5.36 External Bus Timing (Multiplexed bus) Symbol Characteristic Measurement condition Value Unit Min. Max. tsu(S-ALE) Chip-select setup time for ALE Refer to Figure 5.6 (1) ns th(R-S) Chip-select hold time after read 1.5 × tc(Base) - 15 ns tsu(A-ALE) Address setup time for ALE (1) ns th(ALE-A) Address hold time after ALE 0.5 × tc(Base) - 5 ns th(R-A) Address hold time after read 1.5 × tc(Base) - 15 ns td(ALE-R) ALE-read delay time 0.5 × tc(Base) - 5 0.5 × tc(Base) + 10 ns tw(ALE) ALE pulse width (1) ns tdis(R-A) Address disable time after read 8ns tw(R) Read pulse width (1) ns th(W-S) Chip-select hold time after write 1.5 × tc(Base) - 15 ns th(W-A) Address hold time after write 1.5 × tc(Base) - 15 ns td(ALE-W) ALE-write delay time 0.5 × tc(Base) - 5 0.5 × tc(Base) + 10 ns tw(W) Write pulse width (1) ns tsu(D-W) Data setup time for write (1) ns th(W-D) Data hold time after write 0.5 × tc(Base) ns |
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