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R5F64166HDFB Datasheet(PDF) 60 Page - Renesas Technology Corp |
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R5F64166HDFB Datasheet(HTML) 60 Page - Renesas Technology Corp |
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60 / 98 page  REJ03B0253-0110 Rev.1.10 Page 60 of 95 Jun 23, 2010 R32C/116 Group 5. Electrical Characteristics Notes: 1. Program/erase definition This value represents the number of erasures per block. If the flash memory is programmed/erased n times, each block can be erased n times. i.e. If 4-word write is performed in 512 different addresses in the block A of 4 Kbyte and then the block is erased, it is considered the programming/erasure is performed just once. However a write in the same address more than once for one erasure is disabled (overwrite disabled). 2. The data retention time includes the periods when the supply voltage is not applied and no clock is provided. 3. Please contact a Renesas Electronics sales office regarding data retention time other than the above. Table 5.7 RAM Electrical Characteristics (VCC = 3.0 to 5.5 V, VSS =0V, and Ta = Topr, unless otherwise noted) Symbol Characteristic Measurement condition Value Unit Min. Typ. Max. VRDR RAM data retention voltage in stop mode 2.0 V Table 5.8 Flash Memory Electrical Characteristics (VCC = 3.0 to 5.5 V, VSS =0V, and Ta = Topr, unless otherwise noted) Symbol Characteristic Value Unit Min. Typ. Max. — Programming and erasure endurance of flash memory (1) Program area 1000 times Data area 10000 times — 4-word program time Program area 150 900 µs Data area 300 1700 µs — Lock bit-program time Program area 70 500 µs Data area 140 1000 µs — Block erasure time 4 Kbyte block 0.12 3.0 s 32 Kbyte block 0.17 3.0 s 64 Kbyte block 0.20 3.0 s — Data retention (2) Ta = 55°C (3) 10 years |
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