MMBT5550 datasheet(3/4 Pages) ZOWIE

Part #	MMBT5550

Description	HIGH VOLTAGE TRANSISTOR NPN SILICON

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Manufacturer	ZOWIE [Zowie Technology Corporation]

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MMBT5550

Figure 2. Collector Saturation Region

IB, BASE CURRENT ( mA )

IC = 1.0 mA

10 mA

30 mA

100 mA

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT ( mA )

TJ = 25

o

C

TJ = -55

o

C

TJ = +125

o

C

VCE=1.0 V

500

5.0

10

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

30

20

300

100

50

7.0

1.0

0

0.3

0.005

0.01

0.2

0.5

1.0

2.0

20

50

0.8

0.5

0.4

0.9

0.7

0.6

0.2

0.02

0.05

0.1

10

0.1

5.0

Figure 3. Collector Cut - Off Region

VBE, BASE - EMITTER VOLTAGE (VOLTS)

TJ = 125

o

C

TJ = 75

o

C

TJ = 25

o

C

REVERSE

FORWARD

10

1

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

0.2

0.4

0.3

0.1

0

0.1

0.2

0.3

0.4

0.5

0.6

VCE = 30 V

IC = ICES

Figure 4. " On " Voltages

IC, COLLECTOR CURRENT ( mA )

0.6

1.0

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

0.8

0.4

0.2

0

0.3

3.0

30

TJ= 25

o

C

VBE(SAT) @ IC/IB = 10

VCE(SAT) @ IC/IB = 10

VCE=5.0 V

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