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k3565 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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k3565 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3565 2009-09-29 5 1000 800 600 400 200 0 25 50 75 100 125 150 ドレイン・ソース間電圧 VDS (V) SAFE OPERATING AREA CHANNEL TEMPERATURE (INITIAL) Tch (°C) EAS – Tch rth – tw PULSE WIDTH tw (s) 0.01 1 0.1 1 10 100 10 1000 100 10000 ※ SINGLE NONREPETITIVE PULSE Tc=25℃ CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. ID max (PULSED) * ID max (CONTINUOUS) * DC OPERATION Tc = 25°C 100 μs * 1 ms * VDSS max −15 V 15 V TEST CIRCUIT WAVE FORM IAR BVDSS VDD VDS RG = 25 Ω VDD = 90 V, L = 43.6mH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS T PDM t Duty = t/T Rth (ch-c) = 1.25°C/W Duty=0.5 0.2 0.1 SINGLE PULSE 0.05 0.02 0.01 0.01 10μ 0.1 1 10 100μ 1m 10m 100m 1 10 T PDM t Duty = t/T Rth (ch-c) = 2.78°C/W 0.001 |
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