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k3565 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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k3565 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3565 2009-09-29 4 100 40 0 0 40 80 120 160 20 60 80 200 CASE TEMPERATURE Tc (°C) RDS (ON) – Tc DRAIN-SOURCE VOLTAGE VDS (V) IDR – VDS DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE – VDS CASE TEMPERATURE Tc (°C) Vth – Tc CASE TEMPERATURE Tc (°C) PD – Tc TOTAL GATE CHARGE Qg (nC) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 0 100 200 300 400 500 0 4 8 12 16 20 0 10 20 VDD = 100 V VDS VGS 400 200 30 40 COMMON SOURCE ID = 5 A Tc = 25°C PULSE TEST COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C 10 0.1 100 1000 10000 1 3 5 10 30 50 100 Ciss Coss Crss COMMON SOURCE PULSE TEST 160 −40 0 40 80 120 −80 10 8 6 4 2 0 ID = 5A 1.5 3 VGS = 10 V COMMON SOURCE Tc = 25°C PULSE TEST 0 0.1 −0.4 0.3 0.5 1 3 5 10 −0.8 −1.2 −1.6 VGS = 0, −1 V 10 3 1 COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST 0 1 2 3 5 −80 −40 0 40 80 120 160 4 |
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