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2SK3176 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK3176 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3176 2009-09-29 4 0 0 100 250 200 80 50 150 200 40 120 160 30 0 Common source Tc = 25°C Pulse test 5 10 VGS = 0 V 3 0.4 0.8 1.2 1.6 2.0 100 1 5 50 10 3 30 300 Common source VGS = 0 V f = 1 MHz Tc = 25°C 1000 10000 3000 0.1 0.3 1 10 30 100 3 Crss Coss Ciss 100 0 −80 160 40 −40 80 120 Common source VGS = 10 V Pulse test 15 0 0.02 0.04 0.06 0.08 0.10 ID = 30 A 7.5 0 10 20 5 15 0 0 100 200 200 80 50 150 40 120 160 VDS VGS 160 VDD = 40 V 80 Common source ID = 30 A Tc = 25°C Pulse test −80 160 80 −40 40 0 120 Common source VDS = 10 V ID = 1 mA Pulse test 0 5 3 1 2 4 RDS (ON) – Tc IDR – VDS Case temperature Tc ( °C) Drain-source voltage VDS (V) Capacitance – VDS Vth – Tc Drain-source voltage VDS (V) Case temperature Tc ( °C) PD – Tc Dynamic Input/Output Characteristics Case temperature Tc ( °C) Total gate charge Qg (nC) |
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