K4B2G0446C datasheet(2/23 Pages) SAMSUNG

Part #	K4B2G0446C

Description	DDR3 SDRAM Memory

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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Product Guide

DDR3 SDRAM Memory

May. 2010

1. DDR3 SDRAM MEMORY ORDERING INFORMATION

51 : 512Mb

1G :

1Gb

2G :

2Gb

4G :

4Gb

04 : x 4

08 : x 8

16 : x16

3 : 4 Banks

4 : 8 Banks

5 : 16 Banks

3. DRAM Type

4. Density

5. Bit Organization

6. # of Internal Banks

M

A

B

C

D

E

F

G

H

Z

H

J

M

C

L

Y

9. Package Type

8. Revision

10. Temp & Power

1. SAMSUNG Memory : K

2. DRAM : 4

Revision

# of Internal Banks

Bit Organization

Density

DRAM Type

DRAM

SAMSUNG Memory

Interface (VDD, VDDQ)

Package Type

Temp & Power

1

2

3

4

5

6

7

8

9

10

11

Speed

B : DDR3 SDRAM

: Commercial Temp.( 0

°C ~ 85°C) & Normal Power

: Commercial Temp.( 0

°C ~ 85°C) & Low Power

: Commercial Temp.( 0

°C ~ 85°C) & Low VDD(1.35V)

: FBGA (Lead-free)

: FBGA (Halogen-free & Lead-free)

: FBGA (Lead-free, DDP)

: FBGA (Halogen-free & Lead-free, DDP)

: 1st Gen.

: 2nd Gen.

: 3rd Gen.

: 4th Gen.

: 5th Gen.

: 6th Gen.

: 7th Gen

: 8th Gen

: 9th Gen

11. Speed

K 4 B X X X X X X X - X X X X

: DDR3-800 (400MHz @ CL=6, tRCD=6, tRP=6)

: DDR3-1066 (533MHz @ CL=7, tRCD=7, tRP=7)

: DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9)

: DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11)

F7

F8

H9

K0

6 : SSTL (1.5V, 1.5V)

7. Interface ( VDD, VDDQ)

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K4B2G0446C Datasheet(PDF) 2 Page - Samsung semiconductor

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