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CDCE62005 Datasheet(PDF) 14 Page - Texas Instruments |
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CDCE62005 Datasheet(HTML) 14 Page - Texas Instruments |
14 / 80 page 5 pF LVCMOS CDCE62005 SCAS862C – NOVEMBER 2008 – REVISED FEBRUARY 2010 www.ti.com ELECTRICAL CHARACTERISTICS OPERATING CONDITIONS (Continued) recommended operating conditions for the CDCE62005 device for under the specified Industrial temperature range of –40°C to 85°C PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT LVCMOS OUTPUT OR AUXILIARY OUTPUT fclk Output frequency, see Figure Below Load = 5 pF to GND 0 250 MHz High-level output voltage for LVCMOS VOH VCC = min to max IOH = –100 mA VCC –0.5 outputs Low-level output voltage for LVCMOS VOL VCC = min to max IOL =100 µA 0.3 V outputs IOH High-level output current VCC = 3.3 V VO = 1.65 V –30 mA IOL Low-level output current VCC = 3.3 V VO = 1.65 V 33 mA Reference (PRI_IN or SEC_IN) to Output Outputs are set to 122.88 MHz, Reference tpho 0.35 ns Phase offset at 30.72 MHz tpd(LH)/ Propagation delay from PRI_IN or SEC_IN Crosspoint to VCC/2, load In Bypass Mode 4 ns to Outputs tpd(HL) All Outputs set at 200 MHz in bypass mode tsk(o) Skew, output to output For Y0 to Y4 75 ps only, Reference = 200 MHz CO Output capacitance on Y0 to Y4 VCC = 3.3 V; VO = 0 V or VCC 5 pF IOZH VO = VCC 5 mA 3-State LVCMOS output current IOZL VO = 0 V –5 mA IOPDH VO = VCC 25 mA Power Down output current IOPDL VO = 0 V 5 mA Duty cycle LVCMOS 45% 55% tslew-rate Output rise/fall slew rate 3.6 5.2 V/ns (1) All typical values are at VCC = 3.3 V, temperature = 25°C 14 Submit Documentation Feedback Copyright © 2008–2010, Texas Instruments Incorporated Product Folder Link(s) :CDCE62005 |
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