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ZRC250R01 Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZRC250R01 Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 5 page ABSOLUTE MAXIMUM RATING Reverse Current 25mA Forward Current 25mA Operating Temperature -40 to 85°C Storage Temperature -55 to 125°C Power Dissipation (Tamb=25°C) SOT23 330mW E-line, 3 pin (TO92) 500mW E-line, 2 pin (TO92) 500mW SO8 625mW ELECTRICAL CHARACTERISTICS TEST CONDITIONS (Unless otherwise stated) Tamb=25°C SYMBOL PARAMETER CONDITIONS LIMITS TOL% UNITS MIN TYP MAX VR Reverse Breakdown Voltage I R=150µA 2.475 2.45 2.425 2.5 2.5 2.5 2.525 2.55 2.575 1 2 3 V IMIN Minimum Operating Current 13 20 µA IR Recommended Operating Current 0.02 5 mA TC † Average Reverse Breakdown Voltage Temp. Co. IR(min) to IR(max) 30 90 ppm/°C RS § Slope Resistance 0.4 1 Ω ZR Reverse Dynamic Impedance IR =1mA f = 100Hz IAC=0.1 IR 0.3 0.8 Ω EN Wideband Noise Voltage IR=150µA f = 10Hz to 10kHz 60 µV(rms) Reverse Characteristics Reverse Voltage (V) 0 1.0 2.0 3.0 TA=25°C 0 10 20 30 40 ZRC250 † TC = (V R (max)−VR(min)) x 1000000 VR x (T(max)−T(min)) Note: VR(max) - VR(min) is the maximum deviation in reference voltage measured over the full operating temperature range. § RS = VR Change(IR (min) to IR (max)) IR (max) − IR (min) 4-248 |
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