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2N3904 Datasheet(PDF) 2 Page - Silicon Standard Corp. |
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2N3904 Datasheet(HTML) 2 Page - Silicon Standard Corp. |
2 / 4 page ![]() 03/17/2008 Rev.1.00 www.SiliconStandard.com 2 ELECTRICAL CHARACTERISTICS (Tamb=25 o C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Collector cut-off current ICEO VCE= 40V, IB=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE1 VCE=1V, IC=10mA 100 400 hFE2 VCE=1V, IC=50mA 60 DC current gain hFE3 VCE=1V, IC=100mA 30 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 0.95 V Transition frequency fT VCE=20V,IC=10mA,f=100MHz 300 MHZ Delay Time td 35 ns Rise Time tr VCC=3V,VBE=0.5V, IC=10mA,IB1=1mA 35 ns Storage Time ts 200 ns Fall Time tf VCC=3V, IC=10mA IB1=IB2=1mA 50 ns CLASSIFICATION OF hFE1 Rank O Y G Range 100-200 200-300 300-400 2N3904 |
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