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IRLB3034PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRLB3034PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  01/14/09 www.irf.com 1 HEXFET® Power MOSFET S D G PD -97363 IRLB3034PbF GD S Gate Drain Source VDSS 40V RDS(on) typ. 1.4m : max. 1.7m : ID (Silicon Limited) 343Ac ID (Package Limited) 195A Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free TO-220AB IRLB3034PbF Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current d A EAR Repetitive Avalanche Energy d mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 0.4 RθCS Case-to-Sink, Flat, Greased Surface 0.5 ––– RθJA Junction-to-Ambient ––– 62 See Fig. 14, 15, 22a, 22b, A °C °C/W 255 375 4.6 ±20 2.5 10lbf xin (1.1Nxm) -55 to + 175 300 Max. 343 c 243 c 1372 195 |
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Similar Description - IRLB3034PBF |
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