FGL35N120FTD datasheet(2/9 Pages) FAIRCHILD

Part #	FGL35N120FTD

Description	1200V, 35A Trench IGBT

Download	9 Pages

Scroll/Zoom	100%

Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

Logo

2 / 9 page

2

www.fairchildsemi.com

FGL35N120FTD Rev. A

Package Marking and Ordering Information

Electrical Characteristics of the IGBT T

C = 25°C unless otherwise noted

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FGL35N120FTD

FGL35N120FTDTU

TO-264

-

30

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Off Characteristics

BVCES

Collector to Emitter Breakdown Voltage

VGE = 0V, IC = 250µA

1200

-

V

ICES

Collector Cut-Off Current

VCE = VCES, VGE = 0V

-

1

mA

IGES

G-E Leakage Current

VGE = VGES, VCE = 0V

-

±250

nA

On Characteristics

VGE(th)

G-E Threshold Voltage

IC = 35mA, VCE = VGE

3.5

6.2

7.5

V

VCE(sat)

Collector to Emitter Saturation Voltage

IC = 35A, VGE = 15V

-1.68

2.2

V

IC = 35A, VGE = 15V,

TC = 125

oC

-2.0

-

V

Dynamic Characteristics

Cies

Input Capacitance

VCE = 30V, VGE = 0V,

f = 1MHz

-

5090

-

pF

Coes

Output Capacitance

-

180

-

pF

Cres

Reverse Transfer Capacitance

-

95

-

pF

Switching Characteristics

td(on)

Turn-On Delay Time

VCC = 600V, IC = 35A,

RG = 10Ω, VGE = 15V,

Inductive Load, TC = 25

oC

-34

-

ns

tr

Rise Time

-

63

-

ns

td(off)

Turn-Off Delay Time

-

172

-

ns

tf

Fall Time

-

107

-

ns

Eon

Turn-On Switching Loss

-

2.5

-

mJ

Eoff

Turn-Off Switching Loss

-

1.7

-

mJ

Ets

Total Switching Loss

-

4.2

-

mJ

td(on)

Turn-On Delay Time

VCC = 600V, IC = 35A,

RG = 10Ω, VGE = 15V,

Inductive Load, TC = 125

oC

-33

-

ns

tr

Rise Time

-

66

-

ns

td(off)

Turn-Off Delay Time

-

180

-

ns

tf

Fall Time

-

146

-

ns

Eon

Turn-On Switching Loss

-

3.1

-

mJ

Eoff

Turn-Off Switching Loss

-

2.1

-

mJ

Ets

Total Switching Loss

-

5.2

-

mJ

Qg

Total Gate Charge

VCE = 600V, IC = 35A,

VGE = 15V

-

210

-

nC

Qge

Gate to Emitter Charge

-

42

-

nC

Qgc

Gate to Collector Charge

-

101

-

nC

Similar Part No. - FGL35N120FTD

Manufacturer	Part #	Datasheet	Description
LEMO Connectors	FGL.2K.302.SLLC50	96Kb / 4P	K - Outdoor keyed
	FGL.2K.310.CYMK90	60Kb / 3P	K - Outdoor keyed
	FGL.3K.305.CYPC65Z	91Kb / 4P	K - Outdoor keyed
	FGL.3K.306.CLLC90Z	72Kb / 3P	K - Outdoor keyed
	FGL.4K.348.CLLC14H	68Kb / 3P	K - Outdoor keyed

More results

Similar Description - FGL35N120FTD

Manufacturer	Part #	Datasheet	Description
Fuji Electric	6MBI35S-120	498Kb / 4P	IGBT(1200V/35A)
Fuji Electric	7MBR35SB120	559Kb / 7P	IGBT(1200V/35A/PIM)
Renesas Technology Corp	RJH1CV7DPK	126Kb / 10P	1200V - 35A - IGBT Application: Inverter
	RJH1CV7DPK	126Kb / 10P	1200V - 35A - IGBT Application: Inverter
	RJH1CV7DPQ-E0	126Kb / 10P	1200V - 35A - IGBT Application: Inverter
	RJH1CV7DPQ-E0	59Kb / 4P	1200V - 35A - IGBT Application: Inverter
	RJH1CV7DPQ-E0	186Kb / 10P	1200V - 35A - IGBT Application: Inverter
Fairchild Semiconductor	FGA25N12ANTD	861Kb / 9P	1200V NPT Trench IGBT
	FGA25N120ANTD	658Kb / 9P	1200V NPT Trench IGBT
	FGA20N120FTD	721Kb / 9P	1200V, 20A Trench IGBT

More results

FGL35N120FTD Datasheet(PDF) 2 Page - Fairchild Semiconductor

FGL35N120FTD Datasheet(HTML) 2 Page - Fairchild Semiconductor

Similar Part No. - FGL35N120FTD

Similar Description - FGL35N120FTD

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL