tm

©2010 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FGL35N120FTD Rev. A

February 2010

Absolute Maximum Ratings

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Description

Ratings

Units

Collector to Emitter Voltage

1200

V

Gate to Emitter Voltage

± 25

V

Collector Current

70

A

Collector Current

35

A

Pulsed Collector Current

105

A

Diode Continuous Forward Current

40

A

Maximum Power Dissipation

W

Maximum Power Dissipation

W

Operating Junction Temperature

-55 to +150

Storage Temperature Range

-55 to +150

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

Symbol

Parameter

Ratings

Units

Thermal Resistance, Junction to Case

0.34

Thermal Resistance, Junction to Case

0.9

Thermal Resistance, Junction to Ambient

25

FGL35N120FTD

1200V, 35A Trench IGBT

Features

• Field Stop Trench Technology

• High Speed Switching

• High Input Impedance

Applications

• Induction Heating And Microwave Oven

• Soft Switching Applications

General Description

Using advanced field stop trench technology, Fairchild’s 1200V

trench IGBTs offer superior conduction and switching perfor-

mances, and easy parallel operation with exceptional avalanche

ruggedness. This device is designed for soft switching applica-

tions.

G

E

C