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FGL35N120FTD Datasheet(PDF) 7 Page - Fairchild Semiconductor |
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FGL35N120FTD Datasheet(HTML) 7 Page - Fairchild Semiconductor |
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7 / 9 page  7 www.fairchildsemi.com FGL35N120FTD Rev. A Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Recovery Current Figure 21. Stored Charge Figure 22. Reverse Recovery Time Figure 23.Transient Thermal Impedance of IGBT 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 10 0.2 TJ = 25 o C 50 T C = 25 o C T C = 125 o C TJ = 125 o C Forward Voltage, VF [V] 10 20 30 40 3 4 5 6 7 8 di/dt = 200A/µs di/dt = 100A/µs Forward Current, IF [A] 10 20 30 40 0.6 0.8 1.0 1.2 1.4 di/dt = 200A/µs di/dt = 100A/µs Forward Current, IF [A] 10 20 30 40 100 200 300 400 500 600 di/dt = 200A/µs di/dt = 100A/µs Forward Current, IF [A] 1E-5 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse Rectangular Pulse Duration [sec] Duty Factor, D = t1/t2 Peak T j = Pdm x Zthjc + TC 0.5 t1 PDM t2 |
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